InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment

GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at 1000°C (in vacuum) for 25 h. Despite slow gate contact degradation, major degradation of the heterostructure could ...