InP/GaAsSb DHBTs With Simultaneous $f_{\rm T}/f_{\rm MAX}=428/621~{\rm GHz}$Rickard Lovblom,Ralf Fluckiger,Maria Alexandrova,O Ostinelli,C R BolognesiIEEE Electron Device Letters(2013)引用 33|浏览21暂无评分关键词gallium arsenideAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要