Edge Effects in Self-Heating-Related Instabilities in p-Channel Polycrystalline-Silicon Thin-Film Transistors

Self-heating-related instabilities have been investigated in p-channel polycrystalline-silicon thin-fllm transistor, showing an anomalous transconductance (gm) increase. The gm increase is a fingerprint of edge effects, resulting from a buildup of positive trapped charge in the gate oxide at the channel edges. This was confirmed by the annihilation of such positive charges obtained by sequential h...