11.72- Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7

Megan Snook,Harold Hearne,Ty Mcnutt,Victor Veliadis,Nabil Elhinnawy,Bettina Nechay,Stephen L Woodruff,Robert E Stahlbush,Robert S Howell,D Giorgi, J W White, S Davis

IEEE Electron Device Letters（2012）

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摘要

SiC device area is currently limited by material and processing defects. To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This can increase cost and complexity through dicing, soldering, inclusion of ballast resistors, and forming multiple wire bonds. Furthermore, paralleling numerous discrete devices increa...

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关键词

P-i-n diodes,Leakage current,Silicon carbide,Testing,Integrated circuit interconnections,Electric breakdown

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