High-Speed Aln/Gan Mos-Hfets With Scaled Ald Al2o3 Gate Insulators

Highly scaled AlN/GaN metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) with Al2O3 gate dielectrics of varying thicknesses deposited by atomic layer deposition (ALD) were fabricated, and their performance was compared with Schottky-barrier HFETs (SB-HFETs). MOS-HFETs with an ultrathin 2-nm-thick Al2O3 dielectric and a gate length of 40 nm had direct-current (dc) and radio-frequency (RF) performances similar to the SB-HFETs, with a high extrinsic transconductance of 415 mS/mm, f(T) of 134 GHz, and f(max) of 261 GHz. In contrast, the dc and RF performances of a MOS-HFET with a 4-nm-thick Al2O3 dielectric were degraded by short-channel effects. The 2-nm-thick Al2O3 gate insulator reduced the forward-bias gate current by more than two orders of magnitude. The data suggest the promise of ultrathin ALD Al2O3 gate dielectrics for next-generation high-speed GaN HFETs.