Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Si-capped Ge MOSFETs have good compatibility with existing processes, and promising results have been reported. The process is becoming sufficiently mature to warrant assessment of device reliability. Good time-dependent dielectric breakdown performance has been observed, and negative-bias-temperature-instability susceptibility is better than Si counterparts. Electron trapping is shown to be probl...