Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

J S Moon, Hc Seo,M Antcliffe,Shouxun Lin,C Mcguire, Duydinh Le,Luke O Nyakiti,D K Gaskill,P M Campbell,Km Lee,P M Asbeck

IEEE Electron Device Letters（2012）

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摘要

We report direct radio-frequency (RF) and millimeter-wave detection of epitaxial graphene field-effect transistors (FETs) up to 110 GHz with no dc biases applied, leveraging the nonlinearity of the channel resistance. A linear dynamic range of >; 40 dB was measured, providing at least 20-dB greater linear dynamic range compared to conventional CMOS detectors at transistor level. The measured noise...

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关键词

Radio frequency,FETs,Voltage measurement,Detectors,Logic gates,Noise,Power measurement

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