GaAsSb-Based DHBTs With a Reduced Base Access Distance and \(f_{\mathrm {T}}/f_{\mathrm {MAX}}=\) 503/780 GHzMaria Alexandrova, Ralf Flueckiger,Rickard Lovblom,O Ostinelli,C R BolognesiIEEE Electron Device Letters（2014）引用 41|浏览19暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
