DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories

A new device structure for spin-transfer torque-based magnetic random access memory (STT-MRAM) is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. In addition, because of inherently differential device structure, fast and reliable read operation can be performed. Ou...