Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors
IEEE Electron Device Letters(2012)
摘要
This letter presents a first successful integration of a high-k dielectric, i.e., Al2O3, with III-V semiconductors in ballistic deflection transistors (BDTs). The Al2O3 is deposited using atomic layer deposition, which allows the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows strong dependence on the dielectric permittivity of the material fil...
更多查看译文
关键词
Aluminum oxide,Dielectrics,Logic gates,High K dielectric materials,Transistors,Indium gallium arsenide,Performance evaluation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要