High-Quality Icpcvd Sio2 For Normally Off Algan/Gan-On-Si Recessed Moshfets

We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of similar to 12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.