Low leakage of In0.83Ga0.17As photodiode with Al2O3/SiNx stacks

Jing Yang,Ming Shi,Xiumei Shao,Tao Li,Xue Li,Naiyun Tang,Haimei Gong,Ran Liu,Hengjing Tang,Zhijun Qiu

Infrared Physics & Technology（2015）

引用 17|浏览23

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摘要

•The ALD Al2O3 is used as passivation layer between SiNx layer and semiconductors.•The photodiodes with Al2O3/SiNx stacks has shown a 20% improvement in dark current.•Dark current mechanisms of photodiodes have been analyzed.

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关键词

InGaAs photodiode,Leakage current,Al2O3,ALD

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