Interaction between thin indium films and single-crystal ZnAs 2 substrates

S. F. Marenkin,V. P. Dubkov, A. B. Maimasov,V. A. Popov

Inorganic Materials（2000）

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摘要

X-ray photoelectron and Auger electron spectroscopic studies of In/ZnAs 2 structures revealed a chemical reaction at the film-substrate interface at substrate temperatures between 400 and 650 K. Gibbs energy calculations showed that the more likely products of the interfacial reaction are InAs and Zn 3 As 2 .

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关键词

Auger,Substrate Temperature,Relative Sensitivity Factor,Auger Electron Spectrum,Indium Film

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