Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

V. Veliadis,M. Snook,H. Hearne,B. Nechay, S. Woodruff,C. Lavoie,C. Kirby, E. Imhoff,J. White,S. Davis

Materials science forum（2013）

引用 8|浏览26

关键词

Junction termination extension,JTE,multiple-zone JTE,edge termination,single implant,single photolithography,blocking voltage,high voltage,diode,silicon carbide,SiC,PiN

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