P‐9: Bridged Grain MIC Poly‐Si Thin‐Film Transistors with Sputtered AlOx as Gate Dielectrics

Bridged grain (BG) technology was applied to fabricate MIC poly-Si TFTs with AlOx gate dielectrics. The threshold voltage (Vth) and subthreshold swing (SS) of MIC TFTs are greatly improved. Meanwhile, the drawback of using high-k dielectrics, such as large off-state leakage current and early kink effect was effectively suppressed by using BG structure. Combination of BG and high-k gate insulators makes the resulting device a promising candidate for system on panel applications.