Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

B. Deng,G. He, J.G. Lv,X.F. Chen, J.W. Zhang,M. Zhang, Z.Q. Sun

Optical Materials（2014）

引用 22|浏览3

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摘要

•HfO2 gate dielectrics were deposited on Si and quartz substrate by sputtering.•The as-deposited HfO2 films are monoclinic phase, regardless of deposition power.•Red shift in band gap and increase in refractive index have been detected.

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关键词

High-k gate dielectric,HfO2 thin films,Optical properties,Sputtering,Band gap

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