Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.