CMOS injection‐locked frequency divider with two series‐LC resonators

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS(2011)

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摘要
A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.18-mu m CMOS process. The ILFD is realized with a cross-coupled nMOS LC-tank oscillator with a direct injection MOSFET and two series-LC resonators. M the supply voltage of 0.8 V, the low-band free-running tuning frequency is from 2.7 to 3.18 GHz. One excited high-band frequency band is measured, and the free-running tuning frequency is from 4.07 to 4.13 GHz. The divide-by-2 operational locking range is from 3.4 to 9.4 GHz, and the divide-by-4 operational locking range is from 10.5 (15.95) GHz to 13.6 (16.9) GHz for the low-(high) -frequency band. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:290-293,2011; View this article online at wileyonlinelibrary.com. DOT 10.1002/mop.25716
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关键词
CMOS,dual-band,series-tuned 4th order resonator,divide-by-2 and-4 injection-locked frequency divider
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