An Eight Phase Divide-By-4 Sige Hbt Ring-Oscillator-Based Injection-Locked Frequency Divider

This article presents an eight-phase divide-by-4 silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD). The ILFD is based on a four-stage ring oscillator and was fabricated in the 0.35 nun SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. At the supply voltage V-dd of 1.3 V and at the incident power of 0 d8m, the locking range is about 2.55 GHz from the incident frequency 12.7 to 15.25 GHz. The die area is 0.54 x 0.54 mm(2). (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 201-204, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24887