Investigation of bipolar resistive switching characteristics in Si 3 N 4 -based RRAM with metal-insulator-silicon structure

Fab-friendly Ti/Si3N4/p(+)-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (< 3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.