Mg doping of 3D semipolar InGaN/GaN‐based light emitting diodes

The effects of different Mg doping concentrations in the main p-GaN layer and the p-GaN capping layer on the electroluminescence (EL) properties of three-dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross-section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p-GaN, indicating a higher Mg incorporation efficiency on the {10 (1) over bar1} facet as compared to the {11 (2) over bar2)over bar2} facet. The EL output power is low with a too low Mg concentration of 3x10(19)cm(-3), probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4x10(19)cm(-3) until 1.3x10(20)cm(-3) for the 3D LEDs with the {10 (1) over bar1} facet. Heavy Mg doping in the p-GaN capping layer is required to achieve good ohmic contact performance.