Ge1 − Xsix on Ge-based N-Type Metal–oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order Stress–piezoresistive Relationships
Thin Solid Films（2015）
关键词
Strained germanium silicon,Tensile contact etching stop layer,n-Type metal-oxide-semiconductor field effect transistor,Stress,Simulation,Mobility gain
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