Faceting and nanostructure effects in Si and SiGe epitaxy

D Dutartre, Birgit Seiss,Y Campidelli, D Pellissiertanon,D Barge,R Pantel

Thin Solid Films（2012）

引用 17|浏览19

暂无评分

摘要

Epitaxy in Si technologies has to be integrated in the flow of fabrication; in most cases, it has to be selective and deposition takes place in extremely small patterns.

查看译文

关键词

Silicon,SiGe,Chemical vapor deposition,Epitaxy,Selectivity,Growth rate,Faceting,Morphology

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要