1.55 Mu M Inas Quantum Dot Distribution On Truncated Inp Pyramids And Regrowth By Selective Area Epitaxy

Position and distribution control of 1.55-mu m InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The arrangement of the {103}, {115}, and (100) facets on the pyramid top surface is governed by the shape of the pyramid base and top surface area. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. With shrinking QD number upon reduced top surface area, sharp emission from single QDs is observed at 1.55 mu m. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-mu m telecom wavelength region and their implementation in photonic integrated circuits.