Energy band alignment of SnO2/SrTiO3 epitaxial heterojunction studied by X‐ray photoelectron spectroscopy

(200) SnO2//(111) SrTiO3 (STO) epitaxial heterojunctions were fabricated using the laser molecular epitaxy technique. Sharp junction interface was confirmed by the high-resolution transmission electron microscopy. The valence band offset and conduction band offset of the SnO2/STO heterojunction were determined to be 0.85 +/- 0.20 and 0.45 +/- 0.20eV using XPS, respectively. It is found that a type-II band alignment forms at the SnO2/STO interface. Copyright (c) 2015 John Wiley & Sons, Ltd.