Rutile TiO 2 active-channel thin-film transistor using rapid thermal annealing

TiO 2 active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO 2 as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO 2 films annealed at temperatures above 500 °C changed from an amorphous to a rutile phase. The TFT with a TiO 2 semiconductor annealed at 600 °C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 × 10 5 , and an electron mobility of 0.014 cm 2 /Vs. Moreover, the potential for manipulating TiO 2 -based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.