Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion
Applied Surface Science(2014)
摘要
•Silicon impurities were successfully doped into cBN single crystals by thermal diffusion.•The chemical states of silicon impurities in the cBN crystals are analyzed by XPS.•The activation energy of Si in cBN crystals was affected by the temperature and the time of thermal diffusion.
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关键词
Cubic boron nitride,Si impurities,Thermal diffusion,XPS,Activation energy
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