Laser-assisted atom probe tomography of 15 N-enriched nitride thin films for analysis of nitrogen distribution in silicon-based structure

•Laser-assisted atom probe tomography (LA-APT) was applied to SiN thin films on Si substrates with the 14N:15N ratio of around 0:1 (Si15N) and 1:1 (Si14N15N).•The peak at mass/charge of 15 in the mass spectrum of Si14N15N was dominated by N+, not by N2++.•Usage of 15N isotope can provide basic information for examining nitrogen in Si-based structures by LA-APT.