Sequential physical vapor deposition and chemical vapor deposition for the growth of In 2 O 3 –SnO 2 radial and longitudinal heterojunctions

•In2O3–SnO2 heterojunctions are produced via sequential PVD-CVD growth.•Single crystalline In2O3 are grown first on α-plane sapphire seeded with gold catalytic nanoparticles through vapor transport and condensation.•Single crystalline SnO2 nanowires are then grown at the apex of In2O3 nanowires through CVD thanks to the catalytic activity of the gold droplet at the apex of In2O3 nanowires.•Modulation of temperature for both the processes allows fine tuning of the morphology of the final heterojunctions, in terms of wire size, length and shape.