Sensitivity Driven Artificial Neural Network Correction Models For Rf/Microwave Devices

Vijay Devabhaktuni,Lakshman Mareddy, Srinivas Vemuru,Vani Cheruvu,Yuriy M Goykhman,Tayfun Ozdemir

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING（2012）

引用 8|浏览8

暂无评分

摘要

In this article, we propose a sensitivity based correction model that improves the accuracy of the neural model keeping the structure of artificial neural network (ANN) simple. The proposed approach is applied to the modeling of RF transistors, spiral inductors, and microstrip antennas. Results are compared with conventional ANN and a recent technique referred to as correction model that is assisted by the regula-falsi method. (c) 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.

查看译文

关键词

sensitivity approach, correction model, device modeling, neural networks, design optimization, spiral inductor, MOSFET, patch antenna

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要