Development Of An Extreme Temperature Range Silicon Carbide Power Module For Aerospace Applications

A silicon carbide semiconductor power module is developed for operation at wide temperature extremes. The development of a device substrate, die-attach, interconnect system, and module DC interface is presented in this paper. Electrical and mechanical components of the package are tested and chosen for the best combination to work together as a system. This allows the package to withstand thermal cycling and demonstrate reliability through its operating temperature range of -50 degrees C to 250 degrees C.