A Unified-Ram (Uram) Cell For Multi-Functioning Capacitorless Dram And Nvm

Jin-Woo Han,Seong-Wan Ryu,Chungjin Kim,Sungho Kim,Maesoon Im, Sung Jin Choi, Jin Soo Kim,Kwang Hee Kim,Gi Sung Lee, Jae Sub Oh,Myeong Ho Song,Yun Chang Park,Jeoung Woo Kim,Yang-Kyu Choi

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2（2007）

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摘要

A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a V-T window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9 mu A with a program/erase time of 10nsec for 1T-DRAM operation in a single memory cell transistor.

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关键词

retention time,nonvolatile memory,dram,non volatile memory

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