Electric-Field Effect On Electron-Doped Infinite-Layer Sr0.88la0.12cuo2+X Thin Films

We have used the electric-field effect to modulate the resistivity of the surface of underdoped Sr0.88La0.12CuO2+x thin films, allowing opposite modifications of the electron and hole density in the CuO2 planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric-field effect on the normal-state resistivity is, however, dominated by the electrons, and the superconducting transition temperature increases when carriers are transferred from holes to electrons.