Thermally Robust Dual-Work Function Ald-Mnx Mosfets Using Conventional Cmos Process Flow

Dg Park, Zj Luo, N Edleman, W Zhu,P Nguyen,K Wong, C Cabral, P Jamison,Bh Lee,A Chou,M Chudzik, J Bruley, O Gluschenkov, P Ronsheim, A Chakravarti, R Mitchell,V Ku, H Kim,E Duch,P Kozlowski, C D'Emic,V Narayanan,A Steegen, R Wise,R Jammy,R Rengarajan, H Ng, A Sekiguchi,Ch Wann

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS（2004）

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摘要

Thermally stable dual work function metal gates are demonstrated using a conventional CMOS process flow. The gate structure consists of poly-Si/metal nitrides (MNx)/ SiON (or high-k)/Si stack with atomic layer deposition (ALD)-TaNx for the NFET and ALD-WNx for the PFET. Much enhanced drive current (I-d) and transconductance (G(m)) values, and reduced off current (I-off) characteristics were attained with ALD-MNx gated devices over control poly-Si and PVD-MNx devices within controllable V-t shifts. Excellent scalability of dual work function MNx/high-k gate stack was demonstrated: the EOT was down to 6.6Angstrom with low leakage in a low thermal budget device scheme.

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关键词

cmos integrated circuits,annealing,tin,thermal stability,work function,atomic layer deposition,scalability,leakage current,fabrication,robustness,temperature

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