High electron mobility transistor (HEMT) structure with refractory gate metal Yeongchang Choug,R Grundbacher, Pohsin Liu,D L Leung,R Laimag(2006)引用 25|浏览8暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要