Chip-Level Power-Performance Optimization Through Thermally-Driven Across-Chip Variation (Acv) Reduction

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2011)

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摘要
We report a detailed study of the impact of systematic across-chip variation (ACV) on chip level power-performance. We propose a metric to capture impact of ACV on chip-level leakage quantitatively. Product power-performance can be optimized by minimizing systematic ACV. Thermally-driven ACV was identified as a major mechanism in 32nm SOI technology. An optimized thermal anneal process was used to suppress ACV significantly, leading to a dramatic benefit in leakage power-performance trade-off.
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关键词
low power electronics,annealing,silicon,thermal annealing,chip,silicon on insulator
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