Icp Etching Of Zno In Bcl3/Sf6 Gas Mixtures

ZnO epitaxial layers were plasma etched using BCl3/SF6 gas mixtures in an Oxford Instruments System 100 ICP 180. Etch rates were studied as a function of gas composition, pressure, ICP coil power and RF power. The ZnO etch rate in pure BCl3 at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was similar to 1175 angstrom/min (-1000V bias). The etch rate increased with increasing SF6 percentage in the flow, and for the same conditions in pure SF6 the etch rate was similar to 1350 angstrom/min (-820V bias).