Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Johan Liu, Dong Song,Zhaonian Cheng,Wilson C W Tang,Kei May Lau,K J Chen

device research conference（2007）

引用 3|浏览11

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摘要

In this work, we report the microwave noise characterization of E-mode double-heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure compared to its D-mode counterpart, mainly owing to the lower gate leakage current achieved by the Schottky barrier enhancement in fluorine-plasma treated gate region and the favorable bias conditions for the E-mode HEMT.

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关键词

noise figure,schottky barrier,threshold voltage,leakage current,electron devices,wide band gap semiconductors

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