A 0.35 μm SiGe BiCMOS technology for power amplifier applications

Alvin J Joseph,Qizhi Liu,W Hodge,Paul R Gray,Kenneth J Stein,R Previtikelly,Peter J Lindgren,Ephrem G Gebreselasie, B Voegeli,Panglijen Candra,Douglas B Hershberger,R M Malladi,Pingchuan Wang,Kimball M Watson,Zhongxiang He,James S Dunn

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting（2007）

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摘要

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (f _T - BV _ceo ) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.

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关键词

BiCMOS technology,power amplifier,low inductance metal ground through-silicon,lithography node,frequency 40 GHz,frequency 27 GHz,voltage 6 V,voltage 3.3 V,size 0.35 micron,SiGe

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