Fabrication and characterization of near thresholdless lasers at room temperature

In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 mu m in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra low power threshold (860 nW) and high efficiency (beta=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.