Direct mapping of strain state in nonpolar InGaN/GaN multilayers using dark-field inline electron holography
conference on lasers and electro optics(2015)
摘要
Two-dimensional strain in a nonpolar InGaN/GaN quantum well was measured quantitatively using inline electron holography. A periodic undulation of the strain was observed to arise to compensate otherwise diverging potential associated with the in-plane polarization.
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关键词
strain
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