Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-b-P4VP polymer, which was never used previously for the graphene patterning. The NPG exhibits homogeneous mesh structures with an average neck width of similar to 19 nm. Electronic characterization of single and few layers NPG FETs (field effect transistors) were performed at room temperature. We found that the sub-20 nm neck width creates a quantum confinement in NPG, which has led to a bandgap opening of similar to 0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost, high throughput large-scale production of NPG with critical dimensions down to the nanometer regime.