Effects of total gas velocity on properties of undoped GaN epitaxial layer grown on sapphire (0001) substrate by MOCVD Kyungil Chang, M S Kwon, S I Cho, T W Kang,Sung Ryong Ryumag(2005)引用 23|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要