Novel Junction Engineering Scheme Using Combination of LSA and Spike-RTA

Satoshi Endo,Yasuhiro Maruyama,Yasuhiro Kawasaki,Tatsuo Yamashita,Hidekazu Oda,Yasuo Inoue

international workshop on junction technology（2007）

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摘要

A novel junction engineering scheme using the combination of LSA and spike-RTA is demonstrated. Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demonstrated that LSA-first process is effective for the control of the gate-SDE overlap with shallow and low-resistance SDE. This is because dopant impurities are highly activated first by LSA and diffuse by following spike-RTA keeping high-activation. This technology is promising for 45-nm node CMOS and beyond.

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关键词

temperature,boron,impurities,acceleration,leakage current,annealing

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