The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET

Wen-Kuan Yeh,Wenqi Zhang,Yi-Lin Yang, An-Ni Dai,Kehuey Wu,Tung-Huan Chou,Cheng-Li Lin,Kwang-Jow Gan,Chia-Hung Shih,Po-Ying Chen

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)（2016）

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摘要

In this paper, the impact of width quantization on device characteristic and stressing induced device degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including electrical characteristic clarification and simulation. Carrier conduction in the trapezoidal shape Si-fin body of FinFETs is different for devices with different Fin bottom widths (WFin_bottom), which will impac...

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关键词

FinFETs,Logic gates,Degradation,Hot carriers,Quantization (signal),Performance evaluation,Reliability

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