Digital Ics For High Data Rate/High Voltage Swing Applications In A Production-Near Sige Technology

This paper reports on various digital ICs fabricated in a 0.35 mu m/200 GHz-f(T) production-near SiGe bipolar technology with a V-CE0 of 1.8 V. A 2:1 time-division multiplexer with high differential output voltage swing of 2x2 V-pp operating at a data rate of 40 Gb/s is described. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. Furthermore a 45 Gb/s D-type flip-flop with high input sensitivity and a power consumption of 0.55 W is presented. Additionally a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s is reported. It consumes 0.75 W.