SiC and GaN based BSNPC inverter for photovoltaic systems

Recent studies show that Silicon Carbide and Gallium Nitride based power semiconductors promise better performance over conventional Silicon based devices. In this study, the performance analysis of a three level inverter based on SiC and GaN is discussed for photovoltaic applications. The converter can achieve 99.2% efficiency at 16kHz switching frequency and 1.4kW output power, and operate with good efficiency up to 160kHz. The impact of high performance of SiC and GaN devices on output filter size and cooling requirements is discussed. The study shows that with wide-bandgap devices, heat sink volume can be reduced by 72% and output filter size can be reduced by 57% while keeping very good efficiency.