Achievement And Perspective Of Gan Technology For Microwave Applications

S L Delage,E Morvan,N Sarazin,R Aubry,E Chartier,O Jardel,Marieantoinette Difortepoisson,C Dua,J Jacquet,S Piotrowicz,A Piotrowska,E Kaminska,Jeanclaude De Jaeger,C Gaquiere, Ulrich Heinlen, Ehrard Kohn,Mohammed Alomari,David Maier,J Kuzmik,Dionyz Pogany

18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2（2010）

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摘要

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.

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关键词

component, GaN, power, microwave, solid-state, amplifiers

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