Layout Optimization and Trade-off Between 193i and EUV-based Patterning for SRAM Cells to Improve Performance and Process Variability at 7nm Technology Node
SPIE Proceedings Design-Process-Technology Co-optimization for Manufacturability IX（2015）
关键词
EUVL,193i lithography,Design Technology co-optimization,7nm technology,SRAM cell design,multi-patterning,Fin-CUT optimization,middle of line scheme for SRAM design. Orientation of 1st metal,Mint
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