High Detectivity 8-Similar-To-12-Mu-M Gaas Multiquantum-Well Infrared Photodetectors

PHYSICAL CONCEPTS AND MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS II: INTERNATIONAL SYMPOSIUM(1993)

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摘要
Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated and evaluated. High responsivity Rp > 1 X 105 V/W, high quantum efficiency (eta) > 14%, and high detectivity D(lambda )* > 3 X 1010 cmHz1/2/W, were achieved at T equals 77 K.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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关键词
quantum efficiency,infrared,photodetectors,gallium arsenide
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